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| LAPT 2SC3264 Application : Audio and General Purpose (Ta=25C) 2SC3264 100max 100max 230min 50min 2.0max 60typ 250typ V MHz pF 20.0min 4.0max Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3264 230 230 5 17 5 200(Tc=25C) 150 -55 to +150 Unit V V V A A W C C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=230V VEB=5V IC=25mA VCE=4V, IC=5A IC=5A, IB=0.5A VCE=12V, IE=-2A VCB=10V, f=1MHz External Dimensions MT-200 36.40.3 24.40.2 2-o3.20.1 9 7 21.40.3 2.1 6.00.2 Unit A A V a b 2 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1 hFE Rank O(50 to 100), Y(70 to 140) sTypical Switching Characteristics (Common Emitter) VCC (V) 60 RL () 12 IC (A) 5 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.5 IB2 (A) -0.5 ton (s) 0.30typ tstg (s) 2.40typ tf (s) 0.50typ Weight : Approx 18.4g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) 3 A .0 0 2. A VCE( sat ) - IB Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t)( V ) 3 IC - V BE Temperature Characteristics (Typical) (VCE=4V) 17 15 17 A 1.5 1.0 60 15 A 0mA Collector Current I C (A) 400m 10 A 2 Collector Current I C( A) 200m A 10 p) em 10 0m A C ( 50mA IB=20mA 0 5A 0 0 0 1 2 3 4 0 0.5 1.0 1.5 2.0 0 25C -30C 125 1 (Cas 5 I C= 10A 5 Cas 1 e Te eT mp) 2 3 Collector-Emitter Voltage V C E( V) Base Current I B( A) Base-Emittor Voltage V B E( V) (VCE=4V) 200 DC Curr ent Gain h FE DC Curr ent Gain h FE 200 125C 100 100 50 (VCE=4V) j- a( C/ W) h FE - I C Characteristics (Typical) h FE - I C Temperature Characteristics (Typical) j-a - t Characteristics 3 Typ 50 25C -30C Transient Thermal Resistance 1 0.5 10 10 0.02 0.1 0.5 1 5 10 17 0.02 0.1 0.5 1 5 10 17 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C( A) Collector Current I C( A) fT - IE Characteristics (Typical) (V C E= 12V) 100 40 Safe Operating Area (Single Pulse) 200 10 m P c - T a Derating 80 Cut-o ff Fr eque ncy f T( MH Z) Ma xim um Powe r Dissipat io n P C (W) s 10 DC 160 W ith Typ 60 Co lle ctor Cu rrent I C( A) 5 In fin 120 ite he at si nk 40 1 0.5 Without Heatsink Natural Cooling 80 20 40 0 -0.02 0.1 -0.1 -1 -10 3 10 100 300 Emitter Current I E( A) Collector-Emitter Voltage V C E( V) 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(C) 64 |
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